?
Semiconductor Components Industries, LLC, 2001
September, 2001 ± Rev. 3
1
Publication Order Number:
BF256A/D
BF256A
BF256A is a Preferred Device
JFET - General Purpose
N±Channel
N±Channel Junction Field Effect Transistor designed for VHF and
UHF applications.
?Low Cost TO±92 Type Package
?Forward Transfer Admittance, Yfs
= 4.5 mmhos (Min)
?Transfer Capacitance ± Crss
= 0.7 (Typ)
?Power Gain at f = 800 MHz, Typ. = 11 dB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain±Source Voltage
VDS
30
Vdc
Drain±Gate Voltage
VDG
30
Vdc
Gate±Source Voltage
VGS
30
Vdc
Forward Gate Current
IG(f)
10
mAdc
Total Device Dissipation
@ TA
= 25
°C
Derate above 25°C
PD
360
2.88
mW
mW/°C
Operating and Storage Channel
Temperature Range
Tchannel,
Tstg
±65 to +150
°C
0 20025
50
75 175100 150125
200
FREE AIR TEMPERATURE (°C)
P
D
, MAXIMUM CONTINUOUS
POWER DISSIPATION (mW)
0
Figure 1. Power Derating Curve
500
100
300
400
Device Package Shipping
ORDERING INFORMATION
BF256A TO±92
TO±92
CASE 29
STYLE 5
5000 Units/Box
2
3
1
Preferred
devices are recommended choices for future use
and best overall value.
Y = Year
WW = Work Week
MARKING DIAGRAMS
BF
256A
YWW
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
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相关代理商/技术参数
BF256B 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256B_J35Z 功能描述:JFET JFET N-CHANNEL RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256B_Q 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C_J35Z 功能描述:JFET JFET N-CHANNEL RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C_Q 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF257 功能描述:两极晶体管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
BF257CSM 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN